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new high frequency diode TO-220 C1969 2SC1969 power transistor Integrated Circuits

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Key attributes

Industry-specific attributes

Model Number
2SC1969
Type
-
Brand Name
DYD
Package Type
Throught Hole

Other attributes

Mounting Type
/
Description
/
Place of Origin
Guangdong, China
Package / Case
-
D/C
2020+
Supplier Type
Original manufacturer, Other
Media Available
datasheet
Brand
Integrated Circuits
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
-
Frequency - Transition
-
Operating Temperature
-
Mounting Type
-
Resistor - Base (R1)
-
Resistor - Emitter Base (R2)
-
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Frequency
-
Current Rating (Amps)
-
Noise Figure
-
Power - Output
-
Voltage - Rated
-
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
-
IGBT Type
-
Configuration
Single
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Input
-
NTC Thermistor
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Resistance - RDS(On)
-
Voltage
-
Voltage - Output
-
Voltage - Offset (Vt)
-
Current - Gate to Anode Leakage (Igao)
-
Current - Valley (Iv)
-
Current - Peak
-
Applications
-
Type
Power Transistors
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75V
Operating Temperature
-55°C ~ 175°C (TJ)
Drive Voltage
10V
Vgs (Max)
±20V
Power Dissipation (Max)
4A

Lead time

Product descriptions from the supplier

10 - 99 pieces
$2.00
>= 100 pieces
$1.70

Quantity

Shipping

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Item subtotal (0 variations 0 items)
$0.00
Shipping total
$0.00
Subtotal
$0.00

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